Technology
Common growth and processing techniques are used to fabricate single photon sources which either generate polarization entangled photon pairs or polarization controlled single photons. This offers the opportunity for quantum cryptography with single photons or entangled photon pairs.
IP Rights
German Patent DE 102005057800 B4
European/ US/ Japanese Patent Application
Patent Owner
Technische Universität Berlin, Germany
Technology
We offer a method for producing a photon pair source, which generates entangled photon pairs. This method offers a minimization of the fine structure splitting in Quantum Dots (QDs) to nearly zero using (1,1,1)-orientated semiconductor substrates.
IP Rights
German Patent DE 102008036400 B3
European / Japanese/ Chinese/ Indian/ Korean Patent Application
Patent Owner
Technische Universität Berlin, Germany
Technology
The invention is a semiconductor heterostructure (quantum dot) based memory cell, in which the writing process is based on hole or electron storage and the erasing process is due to the recombination of electrons and holes. This memory cell can be switched between electron and hole storage and used as binary storage element.
IP Rights
German Patent Application 2011
Patent Owner
Technische Universität Berlin, Germany
Technology
This technique is used to form large-area, highly uniform and ordered quantum dot arrays using the combination of nanoimprint lithography (NIL) and an etching step to form nanoholes followed by growing the quantum dots with metal organic chemical vapor deposition (MOCVD). Quantum dot arrays with high and low density structures as well as single QDs at predefined positions can be fabricated.
IP Rights
US Patent Application April 2010
PCT Application
Patent Owner
Technische Universität, Germany
Technology
The invention is a semiconductor nanostructure based non-volatile memory cell that can provide the best of both DRAM and flash memory: long term storage with write speeds nearly as fast as DRAM. One difference from normal flash memory is varying the barrier height by changing the bias on the depletion region, enabling either retention or insertion of charge into the QD. A further difference is growing the QDs in the depletion region of a p-n junction, so that holes are stored in the QDs. Charge removal is achieved by using tunneling. The read mechanism is similar to that of flash memory.
IP Rights
US Patent US 7,948,822 B2
European Patent EP 2097904 B1
German/ Japanese/ Korean/ Patent Application
Patent Owner
Technische Universität Berlin, Germany
Technology
The invention is a very compact single photon system, where the propagation direction of the emitted single photons corresponds to the propagation direction of the optical pump radiation.
IP Rights
US Patent Application September 2010
German Patent Application March 2011
Patent Owner
Humboldt-Universität zu Berlin, Germany
Technische Universität Darmstadt, Germany
The optoelectronic device comprises at least one active section, at least one absorber, and at least one electrooptic modulator. The active section contains an active element generating optical gain when a forward bias is applied.
The absorbing section contains a saturable absorber, preferably operating under a zero or reverse bias, such that the device operates in a self-pulsating mode-locked regime generating pulsed laser light. The electrooptic modulator changes its refractive index due to electrooptical effect. It can contain a stack of quantum wells, wires, or dots, whereas the refractive index being varied due to Quantum Confined Stark Effect. The change of the refractive index results in a change of the effective group velocity of the light within the device, and thus, in a change of the repetition frequency which is detected by a frequency-density detecting system.
The device can be based on an edge-emitting laser, a vertical cavity surface emitting laser, a tilted cavity laser, a distributed feedback laser, a wavelength-stabilized leaky wave laser with reflection from the back side of the substrate.
IP Rights
European patent application EP07000661.4 filed on 13.01.2007; US patent 7,580,595 B1; Japanese patent application 2008-162441 filed on 20.06.2008
Origin
Technische Universität Berlin
The mode locking frequency may reach 200-400 GHz or higher for short devices (~200 µm and less). In vertical cavity devices the frequency may be even higher.
Here we introduce a new multi-segment all-fiber laser device
Recent numerical simulations of the three-segment fiber structure in a wider parameter range demonstrate that the device is also capable of novel pulsed operation regimes.
IP Rights
US Patent Application US 61/211,860
Origin
Humboldt-Universität zu Berlin, Germany
