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Memory Cell for Data Storage


24.08.2011
| Ref.Nr. 10109
Physics&Engineering

Figure showing the writing, storing and erasing process in a QD based memory cellBackground
Computer data storage can be classified into volatile and non-volatile storage. Volatile memories like dynamic random access memories (DRAMs) are short-term memories with high write speed but require an external power source for data storage. Whereas non-volatile flash memories do not need an external power source, store data for years but write information about 1000 times slower than DRAMs.

Technology
This novel semiconductor nanostructure based memory cell combines the advantages of non-volatility of flash memories and the performance and endurance of a DRAM.

IP Rights

US Patent Application December 2010

Patent Owner

Technische Universität Berlin, Germany

 

 

Application Area:
Data storage, Memory cells for optoelectronic devices
Development Stage: Demonstrator
Bild des Benutzers Dr. Kirk Haselton
Licensing Manager: Dr. Kirk Haselton
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Suitable Industry: Computer Industry, Optoelectronic, Consumer Electronics
Benefits:
  • fast write/erase times   
  • high switching speed
  • data storage over years
  • modulation-doped field effect transistor (MODFET) type
  • uses semiconductor nanostructures (Quantum Dots, - Wires or -Wells )