Technology
This novel semiconductor nanostructure based memory cell combines the advantages of non-volatility of flash memories and the performance and endurance of a DRAM.
IP Rights
US Patent Application December 2010
Patent Owner
Technische Universität Berlin, Germany
This novel semiconductor nanostructure based memory cell combines the advantages of non-volatility of flash memories and the performance and endurance of a DRAM.
IP Rights
US Patent Application December 2010
Patent Owner
Technische Universität Berlin, Germany




