Technology
We offer an improved method for the production of porous metal oxide films on a substrate using template assisted electrostatic spray deposition (ESD). It overcomes all known problems of current technologies like dip- and spin coating.This novel method is able to produce unisized mesoporous and macroporous films by directly controlling the size and concentration of the pore forming organic templates in an initially formed precursor solution.
IP Rights
PCT Application with priority on October 2009
Patent Owner
Technische Universität Berlin, Germany
Es wurden 39 Technologieangebote gefunden
Porous Metal Oxide Films
06.01.2012 | Ref.Nr. 09068
Application Area:
Catalysis, Sensors (gas sensors), (Dye sensitized) solar cells, Templates, Displays
Development Stage: Product
Schlagworte: Metal oxide, Pore, Porous,
Weitere Kategorien: Catalysis, Physics & Engineering
Licensing Manager: Jeanne Trommer
T +49 30 2125 4831
F +49 30 2125 4822
Suitable Industry: Chemistry, Photovoltaic, Electronic, Optoelectronic
Benefits:
- Hierarchically structured meso- and macroporous films
- Control of pore morphology (volume, size, distribution, connectivity)
- Pores can be coated with catalytic active material
- Various substrates can be used
- Coating of large substrates
- Easy transfer to industrial applications
- Production under room conditions
Highly Efficient Light Emitters - The Route to Green Lasers
25.08.2011 | Ref.Nr. 06094
Technology
We offer green light emitting semiconductor devices including for example a green laser. The use of ZnCdO as a semiconductor material allows direct emission of green light without frequency doubling.
IP Rights
German Patent Application
Patent Owner
Humboldt-Universität zu Berlin, Germany
Application Area:
Green lasers, Laser diodes
Development Stage: Demonstrator
Schlagworte: Green laser, Laser, laser technology, multimedia, semiconductor material,
Weitere Kategorien: Lasers, Semiconductor, Physics & Engineering
Benefits:
- Direct Green light emission (band gap 2.2 eV - 2.5 eV)
- No frequency doubling involved
- No loss of efficiency
- High degree of crystalline perfection
- High stable semiconductor material
- Small, low cost device
Terahertz Quantum Cascade Lasers
25.08.2011 | Ref.Nr. 09018
Technology
The invention offers a THz Quantum Cascade Laser with improved temperature performance. The THz QCL uses a strain-compensated (Al, Ga, In)As material grown on InP substrates.
IP Rights
PCT Application
Patent Owner
Humboldt-Universität zu Berlin, Germany
University of Texas, USA
Application Area:
Spectroscopy (Chemistry, Biochemistry, Astrophysics), Medical Imaging, Detectors, Sensors
Development Stage: Concept
Schlagworte: QCL, Quantum Cascade Laser, T-ray, Terahertz, THz,
Weitere Kategorien: Lasers, Semiconductor, Physics & Engineering
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Suitable Industry: Security Industry, Chemical Industry, Medical Industry
Benefits:
- Operating frequencies: 0.8 THz - 5 THz
- Operating temperature: 240K minimum
- Operating temperature can be achieved using thermoelectric coolers
- Improved laser gain compared to common THz QCLs
Catalytic Nano-Pen for Cutting Graphene
25.08.2011 | Ref.Nr. 08133
Technology
We provide a catalytic Nano-Pen for high speed trench channeling of mono- and multilayer graphene using silver nanoparticles in an ambient environment and at elevated temperatures. A silver nanoparticle located at a graphene edge catalyzes oxidation of neighboring carbon atoms, thereby burning a trench into the graphene layer.
IP Rights
German Patent DE102008053691B3
US Patent Application
Patent Owner
Humboldt-Universität zu Berlin, Germany
Application Area:
Transparent and flexible electrodes, Flexible Solar cells, Flexible displays, Transistors, Memories
Development Stage: Proof of Concept
Schlagworte: Carbon, Graphene, Lithography,
Weitere Kategorien: Catalysis, Physics & Engineering
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Suitable Industry: (Nano)electronic, Optoelectronic, Consumer Electronic
Benefits:
- high-precision lithography on graphene
- cutting of smooth trenches (peak-to-peak roughness below 2 nm)
- cutting speeds up to 250 nm/s
- Environmentally friendly (gold or silver as catalytic material)
- User friendly (transfer pattern directly from computer to graphene layer)
- Economically priced (no need for complex high-vacuum installations as is required for electron beam lithography)
Quantum well structure
25.08.2011 | Ref.Nr. 03037
Technology
The invention is a quantum well structure including a quantum well layer arranged between two barrier layers. The invention further refers to quantum well photodetectors and quantum cascade laser.
IP Rights
German Patent DE 103 35 443 B4
US Patent US 7,893,425 B2
European Patent Application
Patent Owner
Humboldt-Universität zu Berlin, Germany
Application Area:
Mid-IR Spectroscopic applications, Quantum cascade laser, Quantum-well infrared photodetectors
Development Stage: Prototype
Schlagworte: Photodetector, QCL, Quantum Cascade Laser, Quantum-Well, QWIP,
Weitere Kategorien: Lasers, Semiconductor, Physics & Engineering
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Market Potential: Security industry, Environmental industry
Benefits:
- Vertical detection or emission of photons
- Improved coupling of light into or out of the device
- High sheet densities
- Precise control over the subband energies
- No restrictions on the quantum-well thickness
- Flexibility in structural design
Single or Entangled Photon Source
25.08.2011 | Ref.Nr. 05128
Technology
Common growth and processing techniques are used to fabricate single photon sources which either generate polarization entangled photon pairs or polarization controlled single photons. This offers the opportunity for quantum cryptography with single photons or entangled photon pairs.
IP Rights
German Patent DE 102005057800 B4
European/ US/ Japanese Patent Application
Patent Owner
Technische Universität Berlin, Germany
Application Area:
Quantum cryptography
Development Stage: Lab Level
Schlagworte: Entangled photons, Photon pairs, Quantum Dots, Single photons,
Weitere Kategorien: Communication, Semiconductor, Physics & Engineering
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Suitable Industry: Security Industry, Communication, Information Technology
Benefits:
- Choice of electrically triggered entangled or single photon source
- Thermo-electrical cooling
- Mass production possible
Photon Pair source
25.08.2011 | Ref.Nr. 08112
Technology
We offer a method for producing a photon pair source, which generates entangled photon pairs. This method offers a minimization of the fine structure splitting in Quantum Dots (QDs) to nearly zero using (1,1,1)-orientated semiconductor substrates.
IP Rights
German Patent DE 102008036400 B3
European / Japanese/ Chinese/ Indian/ Korean Patent Application
Patent Owner
Technische Universität Berlin, Germany
Application Area:
Quantum cryptography
Development Stage: Concept
Schlagworte: Entangled photons, Photon pairs, Quantum Dots, Single photons,
Weitere Kategorien: Communication, Semiconductor, Physics & Engineering
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Suitable Industry: Security Industry, Communication, Information Technology
Benefits:
- Compact photon pair source
- High repetition rate
- Produces photons on-demand
Memory Cell for Data storage
25.08.2011 | Ref.Nr. 11017
Technology
The invention is a semiconductor heterostructure (quantum dot) based memory cell, in which the writing process is based on hole or electron storage and the erasing process is due to the recombination of electrons and holes. This memory cell can be switched between electron and hole storage and used as binary storage element.
IP Rights
German Patent Application 2011
Patent Owner
Technische Universität Berlin, Germany
Application Area:
Data storage, Memory cell for optoelectronic devices
Development Stage: Concept
Schlagworte: Memory Cell, Quantum Dots,
Weitere Kategorien: Communication, Semiconductor, Physics & Engineering
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Suitable Industry: Computer Industry, Optoelectronic, Consumer Electronics
Benefits:
- Long-term data storage
- High read/write speed
- Low write/erase voltage (less than 2 V)
Quantum Dot Array
25.08.2011 | Ref.Nr. 10017
Technology
This technique is used to form large-area, highly uniform and ordered quantum dot arrays using the combination of nanoimprint lithography (NIL) and an etching step to form nanoholes followed by growing the quantum dots with metal organic chemical vapor deposition (MOCVD). Quantum dot arrays with high and low density structures as well as single QDs at predefined positions can be fabricated.
IP Rights
US Patent Application April 2010
PCT Application
Patent Owner
Technische Universität, Germany
Application Area:
All QD based devices, Quantum cryptography, Single-photon emitters /transistors
Development Stage: Proof of Concept, Demonstration
Schlagworte: QD, Quantum dot arrays, Self-assembly,
Weitere Kategorien: Communication, Optoelectronics, Semiconductor, Physics & Engineering
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Suitable Industry: Semiconductor/Computer/Security Industry, Consumer Electronics, Communication/Information Technology
Benefits:
- Large area QD arrays
- Highly uniform and regularly ordered QD arrays
- High throughput
- Low cost technique
- Ability for mass production
Memory Cell for Data Storage
25.08.2011 | Ref.Nr. 06125
Technology
The invention is a semiconductor nanostructure based non-volatile memory cell that can provide the best of both DRAM and flash memory: long term storage with write speeds nearly as fast as DRAM. One difference from normal flash memory is varying the barrier height by changing the bias on the depletion region, enabling either retention or insertion of charge into the QD. A further difference is growing the QDs in the depletion region of a p-n junction, so that holes are stored in the QDs. Charge removal is achieved by using tunneling. The read mechanism is similar to that of flash memory.
IP Rights
US Patent US 7,948,822 B2
European Patent EP 2097904 B1
German/ Japanese/ Korean/ Patent Application
Patent Owner
Technische Universität Berlin, Germany
Application Area:
Data storage, Memory cell
Development Stage: Concept
Schlagworte: Data storage, Memory Cell, Quantum Dots,
Weitere Kategorien: Communication, Semiconductor, Physics & Engineering
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Suitable Industry: Computer Industry, Consumer Electronics
Benefits:
- High read/write speed
- Long-term reliability
