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Contact for electrically operated II/VI Semiconductor Structures


24.08.2011
| Ref.Nr. 02048
Physics&Engineering

Background
II/VI semiconductor structures typically use palladium and gold for metallic contacting. These metals have a large contact resistance which causes thermal stress and a high rate of degradation.

Technology
We offer a process for improved electrical contacts for II/VI semiconductor structures. In order to reduce the contact resistance, a lithium nitride (Li3N) layer is deposited between the semiconductor structure and the contact layer. This permits the operation of semiconductor devices (e.g. laser diodes) with lower operating voltages resulting in a longer service life. 

IP Rights
German Patent 199 55 280 C1
US Patent 6,673 641 B1 and 6,893,950 B2

Patent Owner

Technische Universität Berlin, Germany

 

Application Area:
Lasers, Laser diodes, Displays
Development Stage: Demonstration
Schlagworte: Semiconductor,
Bild des Benutzers Dr. Kirk Haselton
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Suitable Industry: Optoelectronic, Semiconductor Industry, Information Technology, Consumer Electronics
Benefits:

  • reduced contact resistance of II/VI semiconductor structures
  • lower operating voltages for laser diodes
  • reduces thermal stress
  • increased service lifetime of laser diodes

     

Positioning of Nanostructures


24.08.2011
| Ref.Nr. 10133
Physics&Engineering

Background
The pre-patterning of a surface to obtain locally arranged nanostructures is usually done by complex patterning techniques like electron beam lithography, focused ion beam etching or ion implantation. These direct surface patterning techniques can cause crystal damage and defects degrading the quality and performance of the nanostructured elements. Another disadvantage is that these techniques only have short-range impact.

Technology
The invention refers to a method for fabricating layer assemblies with locally arranged nanostructures. A buried, selectively modified underlying layer is used to control the growth of nanostructures on the surface by controlling the laterally inhomogeneous strain distribution. This is done using standard lithography, etching and oxidation techniques.

IP Rights
US Patent Application March 2011

Origin
Technische Universität Berlin, Germany
Application Area:
Single photon emitter, Quantum cryptography, Quantum communication
Development Stage: Demonstration
Bild des Benutzers Dr. Kirk Haselton
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Suitable Industry: Information Technology, Communication, Nanoelectronic, Security Industry
Benefits:
  • Long-range impact
  • No defects in close vicinity to the nanostructures
  • Use of conventional structuring methods
  • Electrical adressing of single nanostructures
  • Create nanostructures even on unstructured surfaces
  • Compatible to existing devices

Single Photon System


24.08.2011
| Ref.Nr. 10058
Physics&Engineering

AFM image of the fiber core region showing a nanodiamond (~ 30 nm in diameter) as single photon emitter (marked by arrow)Background
A single photon system consists of an excitation source, for example a laser, a single photon emitter and components collecting the emitted photons and coupling it into an optical fiber. Usually the propagation direction of the single photons is opposite to the propagation direction of the optical pump radiation.

Technology

The invention is a very compact single photon system, where the propagation direction of the emitted single photons corresponds to the propagation direction of the optical pump radiation.

IP Rights
US Patent Application September 2010
German Patent Application March 2011

Patent Owner
Humboldt-Universität zu Berlin, Germany
Technische Universität Darmstadt, Germany

Application Area:
Quantum cryptography, Quantum computation, Quantum communication, Quantum metrology
Development Stage: Prototype
Bild des Benutzers Dr. Kirk Haselton
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Suitable Industry: Optoelectronic, Computer Industry, Information Technology
Benefits:
  • very compact single photon emission system (a few cm³)
  • fiber integrated single photon source
  • nano-/ microscopic single photon emitter
  • operating at room temperature

     

Optoelectronic Data Transmission Device


05.05.2010
| Ref.Nr. 06126
Physics&Engineering

High-speed optoelectronic devices and semiconductor mode-locked lasers are broadly applied in modern data communication and telecommunication systems. The existing devices can be separated into two categories: those directly modulated by injection of current into the gain region, and those externally modulated. Direct-modulation offers the advantage of low cost but requires very high photon densities in the resonant cavity.

The optoelectronic device comprises at least one active section, at least one absorber, and at least one electrooptic modulator. The active section contains an active element generating optical gain when a forward bias is applied.

The absorbing section contains a saturable absorber, preferably operating under a zero or reverse bias, such that the device operates in a self-pulsating mode-locked regime generating pulsed laser light. The electrooptic modulator changes its refractive index due to electrooptical effect. It can contain a stack of quantum wells, wires, or dots, whereas the refractive index being varied due to Quantum Confined Stark Effect. The change of the refractive index results in a change of the effective group velocity of the light within the device, and thus, in a change of the repetition frequency which is detected by a frequency-density detecting system.

The device can be based on an edge-emitting laser, a vertical cavity surface emitting laser, a tilted cavity laser, a distributed feedback laser, a wavelength-stabilized leaky wave laser with reflection from the back side of the substrate.

 

IP Rights
European patent application EP07000661.4 filed on 13.01.2007; US patent 7,580,595 B1; Japanese patent application 2008-162441 filed on 20.06.2008

Origin
Technische Universität Berlin

 

Application Area:
Electronics, Telecommunication
Development Stage: Prototyp
Type of Collaboration: License, Sale, Cooperation
Bild des Benutzers Dr. Kirk Haselton
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Market Potential: Worldwide
Benefits:

The mode locking frequency may reach 200-400 GHz or higher for short devices (~200 µm and less). In vertical cavity devices the frequency may be even higher.

Electrooptical sampling in frequency range via controlling difference of phase


19.03.2010
| Ref.Nr. 03029
Physics&Engineering

This is a method to sample an electronic component for its complete frequency response. A pulsed laser system with a controllable pulse frequency is used to detect the amplitude and phase relating to the fundamental frequency of an electronic signal. Thus, this system can be considered as a kind of rapid oscilloscope coupling two high frequency sources. It further acts as an advanced network analyzer measuring not only on the fundamental frequency but also its harmonics.

IP Rights
German Patent DE 103 49 368

Origin

Technische Universität Berlin, Germany

 

 

Application Area:
Electrooptics
Development Stage: Lab level
Type of Collaboration: License, Sale, Cooperation
Bild des Benutzers Dr. Kirk Haselton
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Market Potential: Worldwide
Benefits:

The functional range of conventional electrooptical sampling devices is significantly extended,  providing easier measure of the frequency response of electronic components.

Multi-segment all-fiber laser device for optical pulse generation


19.03.2010
| Ref.Nr. 09035
Physics&Engineering

The compactness, ruggedness, high beam quality, and efficiency of fiber lasers make them attractive devices for applications in optical communications, signal processing and sensing as well as in medicine and industry. In recent years, much effort has been directed towards the development of pulsed fiber lasers based on Q-switching and mode-locking.

Here we introduce a new multi-segment all-fiber laser device 

  • that emits well-defined optical pulses and/or pulse trains of well-defined but adjustable wavelength without using any external measures such as active modulation or the introduction of a saturable absorber,
  • that contains several segments arranged in direction along the fiber comprising at least one active laser segment, typically two (or even more) active laser segments as well as propagation, grating, and nonlinear refraction segments,
  • where these segments assume a cooperative mode of operation created by new types of self-organization based on the gain-phase coupling of the segments,
  • where pulse shape, duration, repetition rate, and/or pulse power are adjusted or tuned by either the frequency detuning of the laser segments, the propagation time delays between the segments, the nonlinear phase changes induced by the segments, or by a combination of these parameters.

Recent numerical simulations of the three-segment fiber structure in a wider parameter range demonstrate that the device is also capable of novel pulsed operation regimes.

 

IP Rights
US Patent Application US 61/211,860

Origin

Humboldt-Universität zu Berlin, Germany

 

Application Area:
Optical communications
Development Stage: Concept
Type of Collaboration: License
Bild des Benutzers Dr. Kirk Haselton
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Market Potential: Worldwide
Benefits:

  • Pulse repetition rates that can be tuned
  • The device emits in one mode of operation a stable train of optical pulses and in another mode two pulse trains with stable phase relations
  • The frequency difference between the two pulse trains can be tuned
  • The operation wavelengths of both DFB lasers can be tuned relative to each other
  • The device can provide repetition rates between 100 Hz and 200 GHz, even up to 10 THz

Polarisation Dependent Spectroscopy and Microscopy with Sub Picoseconds Time Resolution


19.03.2010
| Ref.Nr. 06057
Physics&Engineering

Today spectroscopic applications are mostly limited by the time resolution or the signal to noice (S/N) ratio. Common Glan polarizers limit the time resolution to about 1 ps, while Wire-Grid-polarizer limit the S/N ratio due to extinction ratios three orders of magnitude lower.

The new approach uses the high extinction ratio of the Glan Polarizer combined with low dispersion to gain sub picosecond resolution. This is reached by special polarizers and the geometry of the setup using a Kerr switch. Variations of the optical assembly allow use as a microscope.

 

IP Rights
German Patent Application DE 10 2006 039 425 A1; European Patent Application EP 189250; US Patent Application US 2008 239 313 A1

Origin
Humboldt-Universität zu Berlin, Germany

Application Area:
Optical industry, spectroscopy
Development Stage: Lab level
Type of Collaboration: License, Sale
Bild des Benutzers Dr. Kirk Haselton
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Market Potential: Worldwide
Benefits:

  • High temporal resolution, sub picosecond
  • High signal to noise ratio
  • Compact design possible

Method for Determining the Frequency Response of an Electrooptical Component


19.03.2010
| Ref.Nr. 03052
Physics&Engineering

Currently frequency analysis of optical signals relies on electrooptical modulators generating variable frequency signals. Subsequently, the response of the component due to the signal is detected and analyzed. Therefore, complex calibration of the system is necessary. Additionally, the frequency range is confined to that of the electrooptical modulator.

This invention provides a method for determining the frequency response of an electrooptical component, particularly, of a light-generating or light-modulating component. Optical pulses with a pulse frequency are generated. The electrooptical component is controlled by an electrical measuring signal with a measuring frequency in such a manner that an optical output signal is formed that is modulated with the measuring frequency. The measuring frequency is equal to an integral multiple of the pulse frequency plus a predetermined frequency offset. The pulses and the output signal are mixed, and a mixed product is detected whose modulation frequency corresponds to the predetermined frequency offset. The mixed product indicates the frequency response of the electrooptical component at the measuring frequency.

 

IP Rights
German Patent Application DE 10 346 379 A1; US Patent US 7,522,285 B2

Origin
Technische Universität Berlin, Germany

Application Area:
Electrooptics
Development Stage: Lab level
Type of Collaboration: License, Sale, Cooperation
Bild des Benutzers Dr. Kirk Haselton
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Market Potential: Worldwide
Benefits:

  • Frequency response of the system can be measured easily by autocorrela-tion
  • No complex calibration of the measuring system is necessary

First Compact Method for All-Optical 3R- and Phase Generation


19.03.2010
| Ref.Nr. 05088
Physics&Engineering

Compact state of the art 3R-regeneration systems for an optical phase-coded data signal are not capable of enhancing the quality of phase information. Since DPSK systems offer 3 dB better performance, phase-coded systems and thus phase regeneration would be favourable in all-optical networks.

This technology allows the entire, all-optical regeneration of DPSK and other phase-coded optical data signals under a conversion of the carrier wavelength. The compact design of the regeneration module opens the possibility to easily integrate it into an optical sub-system avoiding fiber technology. The method also offers the possibility of converting the phase-coded optical signal into an amplitude-coded optical signal. This can be operated independently.

 

IP Rights
German Patent DE 10 2005 037 828

Origin
Technische Universität Berlin, Germany

Application Area:
Communications
Development Stage: Lab level
Type of Collaboration: License, Sale, Cooperation
Bild des Benutzers Dr. Kirk Haselton
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Market Potential: Worldwide
Benefits:
  • All optical  phase regeneration
  • Compact design possible

Ultrashort Laser Pulse Filaments for Material Processing and Analysis


19.03.2010
| Ref.Nr. 02021
Physics&Engineering

High-power femtosecond (fs) laser pulses have been found to propagate in transparent media and even in the atmosphere as thin white-light filaments. These  filaments can be attributed to nonlinear optical phenomena. They can propagate over distances of several kilometres exhibiting power intensities on the order of 5x1013 W/cm2. If the filament hits a solid target, a plasma is ignited. Without any need of focussing equipment the laser beam can be used for example for welding or cutting processes. The spectroscopic analysis of the generated plasma is another application which allows determination of the solid state constituents.

We offer a new method for material processing and material analysis by laser filaments.

 

IP Rights
German Patent DE 10213044
US Patent Application US 2005 127 049 A1

Origin
Freie Universität Berlin, Germany

 

Application Area:
Electronics, Materials Processing & Analysis
Development Stage: Lab level
Type of Collaboration: License, Sale, Industry Cooperation
Schlagworte: Analysis, Cut, Cutting, Laser, Pulses, Welding,
Bild des Benutzers Dr. Kirk Haselton
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Market Potential: Worldwide
Benefits:

  • Material processing and analysis at arbitrary distances
  • No external focussing required
  • No focus tracking required