Technology
The invention refers to a method for fabricating layer assemblies with locally arranged nanostructures. A buried, selectively modified underlying layer is used to control the growth of nanostructures on the surface by controlling the laterally inhomogeneous strain distribution. This is done using standard lithography, etching and oxidation techniques.
IP Rights
US Patent Application March 2011
Origin
Technische Universität Berlin, Germany
The invention refers to a method for fabricating layer assemblies with locally arranged nanostructures. A buried, selectively modified underlying layer is used to control the growth of nanostructures on the surface by controlling the laterally inhomogeneous strain distribution. This is done using standard lithography, etching and oxidation techniques.
IP Rights
US Patent Application March 2011
Origin
Technische Universität Berlin, Germany



