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Highly Efficient Light Emitters - The Route to Green Lasers


25.08.2011 | Ref.Nr. 06094
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Physics&Engineering
Background
The emission of green laser light is of great importance for several applications and procedures in biology, medicine and multimedia. A powerful green laser could revolutionize the market for portable beamers. So far, semiconductor based light emitters, such as laser pointers, convert infrared light by frequency doubling into green light. A significant drawback of this technique is the loss of power and efficiency.

Technology
We offer green light emitting semiconductor devices including for example a green laser. The use of ZnCdO as a semiconductor material allows direct emission of green light without frequency doubling.

IP Rights
German Patent Application

Patent Owner

Humboldt-Universität zu Berlin, Germany

Application Area:
Green lasers, Laser diodes
Development Stage: Demonstrator
Schlagworte: Green laser, Laser, laser technology, multimedia, semiconductor material,
Weitere Kategorien: Lasers, Semiconductor, Physics & Engineering
Bild des Benutzers Dr. Kirk Haselton
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
kirk.haselton@ipal.de
Benefits:
  • Direct Green light emission (band gap 2.2 eV - 2.5 eV)
  • No frequency doubling involved
  • No loss of efficiency
  • High degree of crystalline perfection
  • High stable semiconductor material
  • Small, low cost device

     

Terahertz Quantum Cascade Lasers


25.08.2011 | Ref.Nr. 09018
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Physics&Engineering

Background
Quantum Cascade Lasers (QCLs) are currently the best electrically-pumped sources of Terahertz (THz) radiation regarding output power, linewidth, operating temperatures and efficiency. THz QCLs offer a wide field of applications ranging from astrophysics and security screening to ultrafast spectroscopy in chemistry or biology. For all these applications THz QCLs which can operate at moderate temperature are desired.

Technology
The invention offers a THz Quantum Cascade Laser with improved temperature performance. The THz QCL uses a strain-compensated (Al, Ga, In)As material grown on InP substrates.

IP Rights
PCT Application

Patent Owner
Humboldt-Universität zu Berlin, Germany
University of Texas, USA

Application Area:
Spectroscopy (Chemistry, Biochemistry, Astrophysics), Medical Imaging, Detectors, Sensors
Development Stage: Concept
Schlagworte: QCL, Quantum Cascade Laser, T-ray, Terahertz, THz,
Weitere Kategorien: Lasers, Semiconductor, Physics & Engineering
Bild des Benutzers Dr. Kirk Haselton
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
kirk.haselton@ipal.de
Suitable Industry: Security Industry, Chemical Industry, Medical Industry
Benefits:
  • Operating frequencies: 0.8 THz - 5 THz
  • Operating temperature: 240K minimum
  • Operating temperature can be achieved using thermoelectric coolers
  • Improved laser gain compared to common THz QCLs

     

Quantum well structure


25.08.2011 | Ref.Nr. 03037
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Physics&Engineering

Background
Quantum-well inter-subband devices, such as quantum-well infrared photo-detectors (QWIPs) and quantum cascade lasers (QCLs) are ideal for a variety of ground and space-based applications. Night vision, early warning systems, navigation, flight control systems, weather monitoring, security and surveillance are among the different applications based on QWIPs. QCLs are ideal candidates for the remote sensing of gases in the atmosphere.

Technology
The invention is a quantum well structure including a quantum well layer arranged between two barrier layers. The invention further refers to quantum well photodetectors and quantum cascade laser. 

IP Rights
German Patent DE 103 35 443 B4
US Patent US 7,893,425 B2
European Patent Application

Patent Owner
Humboldt-Universität zu Berlin, Germany

 

Application Area:
Mid-IR Spectroscopic applications, Quantum cascade laser, Quantum-well infrared photodetectors
Development Stage: Prototype
Schlagworte: Photodetector, QCL, Quantum Cascade Laser, Quantum-Well, QWIP,
Weitere Kategorien: Lasers, Semiconductor, Physics & Engineering
Bild des Benutzers Dr. Kirk Haselton
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
kirk.haselton@ipal.de
Market Potential: Security industry, Environmental industry
Benefits:

  • Vertical detection or emission of photons
  • Improved coupling of light into or out of the device
  • High sheet densities
  • Precise control over the subband energies
  • No restrictions on the quantum-well thickness
  • Flexibility in structural design

Contact for electrically operated II/VI Semiconductor Structures


24.08.2011 | Ref.Nr. 02048
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Physics&Engineering

Background
II/VI semiconductor structures typically use palladium and gold for metallic contacting. These metals have a large contact resistance which causes thermal stress and a high rate of degradation.

Technology
We offer a process for improved electrical contacts for II/VI semiconductor structures. In order to reduce the contact resistance, a lithium nitride (Li3N) layer is deposited between the semiconductor structure and the contact layer. This permits the operation of semiconductor devices (e.g. laser diodes) with lower operating voltages resulting in a longer service life. 

IP Rights
German Patent 199 55 280 C1
US Patent 6,673 641 B1 and 6,893,950 B2

Patent Owner
Technische Universität Berlin, Germany

 

Application Area:
Lasers, Laser diodes, Displays
Development Stage: Demonstration
Schlagworte: Semiconductor,
Weitere Kategorien: Lasers, Optoelectronics, Semiconductor, Physics & Engineering
Bild des Benutzers Dr. Kirk Haselton
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
kirk.haselton@ipal.de
Suitable Industry: Optoelectronic, Semiconductor Industry, Information Technology, Consumer Electronics
Benefits:

  • reduced contact resistance of II/VI semiconductor structures
  • lower operating voltages for laser diodes
  • reduces thermal stress
  • increased service lifetime of laser diodes

     

Growth controlled current-confinement for a semiconductor laser


19.03.2010 | Ref.Nr. 05125
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Physics&Engineering

Semiconductor lasers generate a sigificant amount of heat during operation, which causes a number of undesirable effects including increasing the current necessary for a given emission intensity and shorter device lifetime. Especially quantum cascade lasers (QCL) are sensitive to temperature, which results in a reduction in light emission or a cessation of laser operation.

The novelty of the invention is that regions adjacent to the active laser stripes are of the same material composition as the active region without the need for re-growth or deep proton implantation. Further, the active regions are defined prior to epitaxy so that the processing is largely finished (except for metallization) when the structure emerges from the epitaxy reactor.

The resulting structure is planar, enabling ease in contacting, and the sides of the stripes are in intimate thermal contact with material which is thermally conducting, but eletrically insulating. The pre-patterned substrate made of a robust amorphous material is 10-50 nm thick. It is able to withstand temperatures of growth and processing (up to ca. 600 °C).

 

IP Rights
German Patent Application DE 10 2006 013 442 A1; European Patent Application EP 1835575 A1

Origin
Humboldt-Universität zu Berlin

 

Application Area:
Laser industry
Development Stage: Prototyp
Type of Collaboration: License, Cooperation
Schlagworte: Epitaxy, QCL, Quantum Cascade Laser, Temperatures,
Weitere Kategorien: Lasers, Optics & Semiconductor, Physics & Engineering
Bild des Benutzers Dr. Kirk Haselton
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
kirk.haselton@ipal.de
Market Potential: Worldwide
Benefits:
  • The invention allows higher thermal conductivity from the side walls of the active regions, is more planar, and easier to produce.
  • Thicker insulating material than what proton implantation is able to provide and the optical mode confinement is better because of the interface between single and polycrystalline material.
  • Only one growth step is required and only one type of reactor.

Terabit Optical Burst Sampling – Method and Design for Single-shot Optical Sampling


19.03.2010 | Ref.Nr. 06065
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Physics&Engineering

The characterization of a single laser pulse in real-time is of great interest. Here, the difficulty of detection originates from the required resolution in time (about a factor of ten higher than the measuring pulse). This concerns not only the sampling resolution but the sampling rate as well.

The invention allows single-shot laser pulse characterization with a time resolution in the THz regime. It consists of a laser system that provides the sampling pulse, an optical element (e.g. non-linear crystal) which generates the measuring signal through superposition of the sampling pulse and the measuring pulse, and a third element for the detection.

The method based on the transformation of the problem from the time domain into the spectral domain. The sampling laser is a laser system which provides light pulses that have different wavelengths at different time. With an optical element (e.g. grating) it is possible to seperate the wavelength components in space. Therefore, the detection of the sampling points with minimal spatial distance is possible without any problem. This means, every spectral component can be assigned to a distinct time.

 

IP Rights
German Patent DE 10 2006 045 835

Origin
Technische Universität Berlin, Germany

 

 

Application Area:
Electronic industry, Laser industry
Development Stage: Concept
Type of Collaboration: License, Sale, Cooperation
Schlagworte: High-Resolution, Laser, Single-Shot, Terabit Optical Burst Sampling,
Weitere Kategorien: Lasers, Optics & Semiconductor, Physics & Engineering
Bild des Benutzers Dr. Kirk Haselton
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
kirk.haselton@ipal.de
Market Potential: Worldwide
Benefits:

  • High time resolution (THz regime)
  • Single-shot characterization

High Performance Quantum-Cascade Laser


19.03.2010 | Ref.Nr. 04009
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Physics&Engineering

The presence and concentration of a number of gases can be detected by measuring the absorption of mid-infrared light with wavelengths near 4 µm. To measure such absorption, we use an intense and inexpensive light source based on a quantum cascade laser (QCL).

Besides the sensing of organic gases, laser emission in the first atmospheric window has application in free space communication, collision-avoidance radars, cruise-controllers, targeting and “blinding” infrared detectors and cameras. This is a new type of semiconductor quantum-well inter-subband device, with a unique material combination and sequence with very large energetic separation of subbands.

 

IP Rights
German Patent DE 10 2004 009 531 B4; US Patent 7,848,376

Origin
Humboldt-Universität zu Berlin

 

Application Area:
Security, environmental and communication industries as well as for scientific orientated laboratories
Development Stage: Prototyp
Type of Collaboration: License, Industry Cooperation
Schlagworte: detection, Gas, Intersubband, Quantum Cascade Laser, Quantum-Well,
Weitere Kategorien: Communication, Lasers, Optics & Semiconductor, ICT & Software, Physics & Engineering
Bild des Benutzers Dr. Kirk Haselton
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
kirk.haselton@ipal.de
Market Potential: Worldwide
Benefits:

  • First QCL operating in the 3,5-4,5 µm range at room temperature.
  • 240 mW output power; a cryogenic operation 6W output peak power (world record).
  • Tunable.
  • Need no cryogenic cooling (lead-salt lasers) or complex optics (“class-B lasers”)

Ultrashort Laser Pulse Filaments for Material Processing and Analysis


19.03.2010 | Ref.Nr. 02021
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Physics&Engineering

High-power femtosecond (fs) laser pulses have been found to propagate in transparent media and even in the atmosphere as thin white-light filaments. These  filaments can be attributed to nonlinear optical phenomena. They can propagate over distances of several kilometres exhibiting power intensities on the order of 5x1013 W/cm2. If the filament hits a solid target, a plasma is ignited. Without any need of focussing equipment the laser beam can be used for example for welding or cutting processes. The spectroscopic analysis of the generated plasma is another application which allows determination of the solid state constituents.

We offer a new method for material processing and material analysis by laser filaments.

 

IP Rights
German Patent DE 10213044
US Patent Application US 2005 127 049 A1

Origin
Freie Universität Berlin, Germany

 

Application Area:
Electronics, Materials Processing & Analysis
Development Stage: Lab level
Type of Collaboration: License, Sale, Industry Cooperation
Schlagworte: Analysis, Cut, Cutting, Laser, Pulses, Welding,
Weitere Kategorien: Lasers, Optics & Semiconductor, Optoelectronics, Physics & Engineering
Bild des Benutzers Dr. Kirk Haselton
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
kirk.haselton@ipal.de
Market Potential: Worldwide
Benefits:

  • Material processing and analysis at arbitrary distances
  • No external focussing required
  • No focus tracking required