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Memory Cell for Data Storage

25.08.2011 | Ref.Nr. 06125

Physics&Engineering

Figure showing the a) writing b) erasing and c) storing process in a QD based memory cellBackground
The most important factors for computer storage are: read/write speeds, storage density, endurance, reliability, and cost. DRAMs are short-term memories with high speed but the data must be refreshed over 100 times per second to maintain its memory. Flash memory can store data for years without refreshing, but writes information about 1000 times slower than DRAM.

Technology
The invention is a semiconductor nanostructure based non-volatile memory cell that can provide the best of both DRAM and flash memory: long term storage with write speeds nearly as fast as DRAM. One difference from normal flash memory is varying the barrier height by changing the bias on the depletion region, enabling either retention or insertion of charge into the QD. A further difference is growing the QDs in the depletion region of a p-n junction, so that holes are stored in the QDs. Charge removal is achieved by using tunneling. The read mechanism is similar to that of flash memory.

IP Rights
US Patent US 7,948,822 B2

European Patent EP 2097904 B1
German/ Japanese/ Korean/ Patent Application

Patent Owner
Technische Universität Berlin, Germany

Application Area:

Data storage, Memory cell

Development Stage: Concept

Schlagworte: Data storage, Memory Cell, Quantum Dots,

Weitere Kategorien: Communication, Semiconductor, Physics & Engineering

Licensing Manager: Dr. Kirk Haselton

T +49 30 2125 4842

F +49 30 2125 4822

kirk.haselton@ipal.de

Suitable Industry: Computer Industry, Consumer Electronics

Benefits:

High read/write speed
Long-term reliability

Memory Cell for Data Storage

24.08.2011 | Ref.Nr. 10109

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Physics&Engineering

Figure showing the writing, storing and erasing process in a QD based memory cellBackground
Computer data storage can be classified into volatile and non-volatile storage. Volatile memories like dynamic random access memories (DRAMs) are short-term memories with high write speed but require an external power source for data storage. Whereas non-volatile flash memories do not need an external power source, store data for years but write information about 1000 times slower than DRAMs.

Technology
This novel semiconductor nanostructure based memory cell combines the advantages of non-volatility of flash memories and the performance and endurance of a DRAM.

IP Rights
US Patent Application December 2010

Patent Owner
Technische Universität Berlin, Germany

Application Area:

Data storage, Memory cells for optoelectronic devices

Development Stage: Demonstrator

Schlagworte: Data storage, Memory Cell, Quantum Dots, Quantum Wells,