The new sequence recognition method is nearly under and over fitting free. The training procedure doesn’t require an initial set of parameters or incremental optimization, so that the training can run fully automated. The method is able to do “word spotting” in very long sequences. Because of its unique nature it is very insensitive to non-linear distortion. The needed computing cost is low, thus the new method for sequence recognition can work in real time.
IP Rights
EP and US patent application with priority on July 2007
Patent Owner
Technische Universität Berlin
Es wurden 15 Technologieangebote gefunden
New Stochastic Method for Sequence Recognition
06.03.2012 | Ref.Nr. 07042
Application Area:
Voice recognition, Image recognition, Biometry data acquisition, Virus scanner
Development Stage: product
Weitere Kategorien: Communication, Algorithms, Video, ICT & Software, Physics & Engineering
Licensing Manager: Jeanne Trommer
T +49 30 2125 4831
F +49 30 2125 4822
Suitable Industry: Automotive, Software, Navigation Technology, Telecommunication, Internet Provider/Services
Benefits:
- One step stochastic method for pattern recognition
- High recognition rate, low error rate
- Unsusceptible to non-linear distortion
- Nearly under- and over-fitting free
- Low consumption costs, works in real time
- Extensions that were developed for HMM’s can be transferred (e.g. adaption methods, connected speech recognition)
Single or Entangled Photon Source
25.08.2011 | Ref.Nr. 05128
Technology
Common growth and processing techniques are used to fabricate single photon sources which either generate polarization entangled photon pairs or polarization controlled single photons. This offers the opportunity for quantum cryptography with single photons or entangled photon pairs.
IP Rights
German Patent DE 102005057800 B4
European/ US/ Japanese Patent Application
Patent Owner
Technische Universität Berlin, Germany
Application Area:
Quantum cryptography
Development Stage: Lab Level
Schlagworte: Entangled photons, Photon pairs, Quantum Dots, Single photons,
Weitere Kategorien: Communication, Semiconductor, Physics & Engineering
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Suitable Industry: Security Industry, Communication, Information Technology
Benefits:
- Choice of electrically triggered entangled or single photon source
- Thermo-electrical cooling
- Mass production possible
Photon Pair source
25.08.2011 | Ref.Nr. 08112
Technology
We offer a method for producing a photon pair source, which generates entangled photon pairs. This method offers a minimization of the fine structure splitting in Quantum Dots (QDs) to nearly zero using (1,1,1)-orientated semiconductor substrates.
IP Rights
German Patent DE 102008036400 B3
European / Japanese/ Chinese/ Indian/ Korean Patent Application
Patent Owner
Technische Universität Berlin, Germany
Application Area:
Quantum cryptography
Development Stage: Concept
Schlagworte: Entangled photons, Photon pairs, Quantum Dots, Single photons,
Weitere Kategorien: Communication, Semiconductor, Physics & Engineering
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Suitable Industry: Security Industry, Communication, Information Technology
Benefits:
- Compact photon pair source
- High repetition rate
- Produces photons on-demand
Memory Cell for Data storage
25.08.2011 | Ref.Nr. 11017
Technology
The invention is a semiconductor heterostructure (quantum dot) based memory cell, in which the writing process is based on hole or electron storage and the erasing process is due to the recombination of electrons and holes. This memory cell can be switched between electron and hole storage and used as binary storage element.
IP Rights
German Patent Application 2011
Patent Owner
Technische Universität Berlin, Germany
Application Area:
Data storage, Memory cell for optoelectronic devices
Development Stage: Concept
Schlagworte: Memory Cell, Quantum Dots,
Weitere Kategorien: Communication, Semiconductor, Physics & Engineering
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Suitable Industry: Computer Industry, Optoelectronic, Consumer Electronics
Benefits:
- Long-term data storage
- High read/write speed
- Low write/erase voltage (less than 2 V)
Memory Cell for Data Storage
25.08.2011 | Ref.Nr. 06125
Technology
The invention is a semiconductor nanostructure based non-volatile memory cell that can provide the best of both DRAM and flash memory: long term storage with write speeds nearly as fast as DRAM. One difference from normal flash memory is varying the barrier height by changing the bias on the depletion region, enabling either retention or insertion of charge into the QD. A further difference is growing the QDs in the depletion region of a p-n junction, so that holes are stored in the QDs. Charge removal is achieved by using tunneling. The read mechanism is similar to that of flash memory.
IP Rights
US Patent US 7,948,822 B2
European Patent EP 2097904 B1
German/ Japanese/ Korean/ Patent Application
Patent Owner
Technische Universität Berlin, Germany
Application Area:
Data storage, Memory cell
Development Stage: Concept
Schlagworte: Data storage, Memory Cell, Quantum Dots,
Weitere Kategorien: Communication, Semiconductor, Physics & Engineering
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Suitable Industry: Computer Industry, Consumer Electronics
Benefits:
- High read/write speed
- Long-term reliability
Memory Cell for Data Storage
24.08.2011 | Ref.Nr. 10109
Technology
This novel semiconductor nanostructure based memory cell combines the advantages of non-volatility of flash memories and the performance and endurance of a DRAM.
IP Rights
US Patent Application December 2010
Patent Owner
Technische Universität Berlin, Germany
This novel semiconductor nanostructure based memory cell combines the advantages of non-volatility of flash memories and the performance and endurance of a DRAM.
IP Rights
US Patent Application December 2010
Patent Owner
Technische Universität Berlin, Germany
Application Area:
Data storage, Memory cells for optoelectronic devices
Development Stage: Demonstrator
Schlagworte: Data storage, Memory Cell, Quantum Dots, Quantum Wells,
Weitere Kategorien: Communication, Semiconductor, Physics & Engineering
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Suitable Industry: Computer Industry, Optoelectronic, Consumer Electronics
Benefits:
- fast write/erase times
- high switching speed
- data storage over years
- modulation-doped field effect transistor (MODFET) type
- uses semiconductor nanostructures (Quantum Dots, - Wires or -Wells )
Positioning of Nanostructures
24.08.2011 | Ref.Nr. 10133
Technology
The invention refers to a method for fabricating layer assemblies with locally arranged nanostructures. A buried, selectively modified underlying layer is used to control the growth of nanostructures on the surface by controlling the laterally inhomogeneous strain distribution. This is done using standard lithography, etching and oxidation techniques.
IP Rights
US Patent Application March 2011
Origin
Technische Universität Berlin, Germany
The invention refers to a method for fabricating layer assemblies with locally arranged nanostructures. A buried, selectively modified underlying layer is used to control the growth of nanostructures on the surface by controlling the laterally inhomogeneous strain distribution. This is done using standard lithography, etching and oxidation techniques.
IP Rights
US Patent Application March 2011
Origin
Technische Universität Berlin, Germany
Application Area:
Single photon emitter, Quantum cryptography, Quantum communication
Development Stage: Demonstration
Schlagworte: Buried layer, Nanostructures, Single photon emitter,
Weitere Kategorien: Communication, Optoelectronics, Physics & Engineering
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Suitable Industry: Information Technology, Communication, Nanoelectronic, Security Industry
Benefits:
- Long-range impact
- No defects in close vicinity to the nanostructures
- Use of conventional structuring methods
- Electrical adressing of single nanostructures
- Create nanostructures even on unstructured surfaces
- Compatible to existing devices
Single Photon System
24.08.2011 | Ref.Nr. 10058
Technology
The invention is a very compact single photon system, where the propagation direction of the emitted single photons corresponds to the propagation direction of the optical pump radiation.
IP Rights
US Patent Application September 2010
German Patent Application March 2011
Patent Owner
Humboldt-Universität zu Berlin, Germany
Technische Universität Darmstadt, Germany
Application Area:
Quantum cryptography, Quantum computation, Quantum communication, Quantum metrology
Development Stage: Prototype
Schlagworte: quantum cryptography, single photon system,
Weitere Kategorien: Communication, Optoelectronics, Physics & Engineering
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Suitable Industry: Optoelectronic, Computer Industry, Information Technology
Benefits:
- very compact single photon emission system (a few cm³)
- fiber integrated single photon source
- nano-/ microscopic single photon emitter
- operating at room temperature
Optoelectronic Data Transmission Device
05.05.2010 | Ref.Nr. 06126
The optoelectronic device comprises at least one active section, at least one absorber, and at least one electrooptic modulator. The active section contains an active element generating optical gain when a forward bias is applied.
The absorbing section contains a saturable absorber, preferably operating under a zero or reverse bias, such that the device operates in a self-pulsating mode-locked regime generating pulsed laser light. The electrooptic modulator changes its refractive index due to electrooptical effect. It can contain a stack of quantum wells, wires, or dots, whereas the refractive index being varied due to Quantum Confined Stark Effect. The change of the refractive index results in a change of the effective group velocity of the light within the device, and thus, in a change of the repetition frequency which is detected by a frequency-density detecting system.
The device can be based on an edge-emitting laser, a vertical cavity surface emitting laser, a tilted cavity laser, a distributed feedback laser, a wavelength-stabilized leaky wave laser with reflection from the back side of the substrate.
IP Rights
European patent application EP07000661.4 filed on 13.01.2007; US patent 7,580,595 B1; Japanese patent application 2008-162441 filed on 20.06.2008
Origin
Technische Universität Berlin
Application Area:
Electronics, Telecommunication
Development Stage: Prototyp
Type of Collaboration: License, Sale, Cooperation
Schlagworte: Data Transmission, High-Speed, Mode-Locked Laser, Optoelectronic,
Weitere Kategorien: Communication, Optics & Semiconductor, Optoelectronics, ICT & Software, Physics & Engineering
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Market Potential: Worldwide
Benefits:
The mode locking frequency may reach 200-400 GHz or higher for short devices (~200 µm and less). In vertical cavity devices the frequency may be even higher.
Multi-segment all-fiber laser device for optical pulse generation
19.03.2010 | Ref.Nr. 09035
Here we introduce a new multi-segment all-fiber laser device
- that emits well-defined optical pulses and/or pulse trains of well-defined but adjustable wavelength without using any external measures such as active modulation or the introduction of a saturable absorber,
- that contains several segments arranged in direction along the fiber comprising at least one active laser segment, typically two (or even more) active laser segments as well as propagation, grating, and nonlinear refraction segments,
- where these segments assume a cooperative mode of operation created by new types of self-organization based on the gain-phase coupling of the segments,
- where pulse shape, duration, repetition rate, and/or pulse power are adjusted or tuned by either the frequency detuning of the laser segments, the propagation time delays between the segments, the nonlinear phase changes induced by the segments, or by a combination of these parameters.
Recent numerical simulations of the three-segment fiber structure in a wider parameter range demonstrate that the device is also capable of novel pulsed operation regimes.
IP Rights
US Patent Application US 61/211,860
Origin
Humboldt-Universität zu Berlin, Germany
Application Area:
Optical communications
Development Stage: Concept
Type of Collaboration: License
Schlagworte: Adjustable Wavelength, All-Fiber Laser, Multi-Segment Laser, Optical Pulses,
Weitere Kategorien: Communication, Optics & Semiconductor, Optoelectronics, ICT & Software, Physics & Engineering
Licensing Manager: Dr. Kirk Haselton
T +49 30 2125 4842
F +49 30 2125 4822
Market Potential: Worldwide
Benefits:
- Pulse repetition rates that can be tuned
- The device emits in one mode of operation a stable train of optical pulses and in another mode two pulse trains with stable phase relations
- The frequency difference between the two pulse trains can be tuned
- The operation wavelengths of both DFB lasers can be tuned relative to each other
- The device can provide repetition rates between 100 Hz and 200 GHz, even up to 10 THz
