Technology
We offer green light emitting semiconductor devices including for example a green laser. The use of ZnCdO as a semiconductor material allows direct emission of green light without frequency doubling.
IP Rights
German Patent Application
Patent Owner
Humboldt-Universität zu Berlin, Germany
Technology
The invention offers a THz Quantum Cascade Laser with improved temperature performance. The THz QCL uses a strain-compensated (Al, Ga, In)As material grown on InP substrates.
IP Rights
PCT Application
Patent Owner
Humboldt-Universität zu Berlin, Germany
University of Texas, USA
Technology
The invention is a quantum well structure including a quantum well layer arranged between two barrier layers. The invention further refers to quantum well photodetectors and quantum cascade laser.
IP Rights
German Patent DE 103 35 443 B4
US Patent US 7,893,425 B2
European Patent Application
Patent Owner
Humboldt-Universität zu Berlin, Germany
Technology
Common growth and processing techniques are used to fabricate single photon sources which either generate polarization entangled photon pairs or polarization controlled single photons. This offers the opportunity for quantum cryptography with single photons or entangled photon pairs.
IP Rights
German Patent DE 102005057800 B4
European/ US/ Japanese Patent Application
Patent Owner
Technische Universität Berlin, Germany
Technology
We offer a method for producing a photon pair source, which generates entangled photon pairs. This method offers a minimization of the fine structure splitting in Quantum Dots (QDs) to nearly zero using (1,1,1)-orientated semiconductor substrates.
IP Rights
German Patent DE 102008036400 B3
European / Japanese/ Chinese/ Indian/ Korean Patent Application
Patent Owner
Technische Universität Berlin, Germany
Technology
The invention is a semiconductor heterostructure (quantum dot) based memory cell, in which the writing process is based on hole or electron storage and the erasing process is due to the recombination of electrons and holes. This memory cell can be switched between electron and hole storage and used as binary storage element.
IP Rights
German Patent Application 2011
Patent Owner
Technische Universität Berlin, Germany
Technology
The invention is a semiconductor nanostructure based non-volatile memory cell that can provide the best of both DRAM and flash memory: long term storage with write speeds nearly as fast as DRAM. One difference from normal flash memory is varying the barrier height by changing the bias on the depletion region, enabling either retention or insertion of charge into the QD. A further difference is growing the QDs in the depletion region of a p-n junction, so that holes are stored in the QDs. Charge removal is achieved by using tunneling. The read mechanism is similar to that of flash memory.
IP Rights
US Patent US 7,948,822 B2
European Patent EP 2097904 B1
German/ Japanese/ Korean/ Patent Application
Patent Owner
Technische Universität Berlin, Germany
